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IXTH130N20T - Power MOSFET

Download the IXTH130N20T datasheet PDF. This datasheet also covers the IXTQ130N20T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Current Handling Capability.
  • Avalanche Rated.
  • Fast Intrinsic rectifier.
  • Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTQ130N20T-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH130N20T N-Channel MOSFET INCHANGE
IXTH130N10T Power MOSFET IXYS Corporation
IXTH130N10T N-Channel MOSFET INCHANGE
IXTH130N15T N-Channel MOSFET INCHANGE
IXTH102N15T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH130N15T Power MOSFET
IXTH130N15X4 Power MOSFET
IXTH13N80 MegaMOS FET
IXTH102N15T Power MOSFET
IXTH102N20T Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TrenchTM Power MOSFET IXTQ130N20T IXTH130N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-3P TO-247 Maximum Ratings 200 V 200 V  20 V  30 V 130 A 75 A 320 A 4 A 1 J 10 V/ns 830 W -55 ... +175 175 -55 ... +175 300 260  C  C  C °C °C 1.13 / 10 5.5 6.0 Nm/lb.