IXTH130N20T Description
TrenchTM Power MOSFET IXTQ130N20T IXTH130N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C,.
IXTH130N20T Key Features
- High Current Handling Capability
- Avalanche Rated
- Fast Intrinsic rectifier -Low RDS(on)
- Easy to Mount
- Space Savings
- High Power Density