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Preliminary Technical Information
TrenchHVTM Power MOSFET
IXTH160N15T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
150 160 9.6
V A mΩ
Symbol
VDSS V
DGR
VGSM
I
D25
ILRMS IDM I
A
EAS
dv/dt
Pd TJ TJM Tstg
T L
TSOLD
M d
Weight
Test Conditions
TJ = 25°C to 175°C
T J
=
25°C
to
175°C;
R GS
=
1MΩ
Transient
T = 25°C C
Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM
T = 25°C C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
1.6 mm (0.062 in.) from case for 10s Plastic body for 10 seconds
Mounting torque
Maximum Ratings TO-247
150
V
150
V
± 30
V
160
A
75
A
430
A
G D S
(TAB)
5
A G = Gate
D = Drain
1.0
J S = Source TAB = Drain
10
830
-55 ... +175 175
-55 ... +175
V/ns
W
°C °C °C
300
°C
260
°C
1.13 / 10 Nm/lb.in.
IXTH160N15T Datasheet
