Datasheet4U Logo Datasheet4U.com

IXTH20N60 - N-Channel MOSFET

Key Features

  • l International standard packages l Low RDS (on).

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MegaMOSTMFET Obsolete: IXTM20N60 N-Channel Enhancement Mode IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS(on) = 0.35 Ω Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS V DGR VGS VGSM ID25 IDM TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM P D TJ TJM Tstg Md Weight T C = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 600 V 600 V ±20 V ±30 V D (TAB) 15N60 20N60 15N60 20N60 15 A 20 A TO-204 AE (IXTM) 60 A Package 80 A unavailable 300 W -55 ... +150 °C 150 °C . -55 ... +150 °C 1.13/10 Nm/lb.in.