IXTH20N60 Description
+150 °C 1.13/10 Nm/lb.in. G = Gate, S = Source, G D D = Drain, TAB = Drain TO-204 = 18 g, TO-247 = 6 g 300.
IXTH20N60 Key Features
- easy to drive and to protect
- VDSS VGS = 0 V
IXTH20N60 is N-Channel MOSFET manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTH20N60 | N-Channel MOSFET |
+150 °C 1.13/10 Nm/lb.in. G = Gate, S = Source, G D D = Drain, TAB = Drain TO-204 = 18 g, TO-247 = 6 g 300.