IXTH300N04T2 Description
+175 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g Characteristic Values Min. 40 V 2.0 4.0 V ±200 nA 5 μA 150 μA 2.5 mΩ G DS (TAB) G = Gate D = Drain S = Source TAB = Drain.
IXTH300N04T2 is Power MOSFET manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTH300N04T2 | N-Channel MOSFET |
+175 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g Characteristic Values Min. 40 V 2.0 4.0 V ±200 nA 5 μA 150 μA 2.5 mΩ G DS (TAB) G = Gate D = Drain S = Source TAB = Drain.