IXTH300N04T2 - Power MOSFET

Datasheet Summary

Features

z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche Rated z Low RDS(on) Advantages z Easy to mount z Space savings z High power density.

IXYS

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Datasheet Details

Part number	IXTH300N04T2
Manufacturer	IXYS
File Size	167.46 KB
Description	Power MOSFET
Datasheet	IXTH300N04T2 Datasheet
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Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH300N04T2 VDSS = ID25 = RDS(on) ≤ 40V 300A 2.5mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold M d Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.

Published: Nov 13, 2020 |