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IXTH300N04T2 - Power MOSFET

Key Features

  • z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche Rated z Low RDS(on) Advantages z Easy to mount z Space savings z High power density.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH300N04T2 VDSS = ID25 = RDS(on) ≤ 40V 300A 2.5mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold M d Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.