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Preliminary Technical Information
Linear L2TM Power MOSFET with extended FBSOA
N-Channel Enhancement Mode Avalanche rated
IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2
VDSS ID25
RDS(on)
= 600V = 30A ≤ 240mΩ
TO-247
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 600 600 ±20 ±30 30 80 30 2 540 -55 to +150 +150 -55 to +150 V V V V A A A J W °C °C °C °C °C Nm/lb.in. g g g G = Gate S = Source
G S G D S
(TAB)
TO-3P
(TAB)
TO-268
1.6mm (0.063in) from case for 10s Plastic body for 10s Mounting torque (TO-247&TO-3P) TO-247 TO-3P TO-268
300 260 1.13/10 6.0 5.5 4.
IXTH30N60L2 Datasheet
