IXTH32N65X - Power MOSFET

IXYS (now Littelfuse)

Download the IXTH32N65X datasheet PDF. This datasheet also covers the IXTP32N65X variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low RDS(ON) and QG.
Low Package Inductance.
Fast Intrinsic Rectifier Advantages.
High Power Density.
Easy to Mount.
Space Savings.

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IXTH32N65X power mosfet by IXYS (now Littelfuse) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IXTP32N65X-IXYS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IXTH32N65X
Manufacturer	IXYS (now Littelfuse)
File Size	213.71 KB
Description	Power MOSFET
Datasheet	IXTH32N65X Datasheet

Full PDF Text Transcription for IXTH32N65X (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTH32N65X. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTP32N65X IXTQ32N65X IXTH32N65X VDSS = ID25 = RDS(on) 650V 32A 135m TO-220AB (IXTP) S...

View more extracted text

65X IXTH32N65X VDSS = ID25 = RDS(on) 650V 32A 135m TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM IS  ID25, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-3P TO-247 Maximum Ratings 650 650 V V 30 V 40 V 32 A 64 A 30 V/ns 500 W -55 ... +150 150 -55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3.0 g 5.5 g 6.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	IXTH32N65X	N-Channel MOSFET	INCHANGE

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