Datasheet4U Logo Datasheet4U.com

IXTH36N50P - PolarHV Power MOSFET

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect © 2006 IXYS All rights reserved DS99228E(01/06) IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV36N50P IXTV 36N50PS Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd R thJC RthCS Test Conditions Characteristic Values (T J = 25° C unless otherwise specified) Min. Typ. Max. VDS= 20 V; ID = 0.5 ID25, pulse test 23 36 S VGS = 0 V, VDS = 25 V, f =.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH36N50P N-Channel MOSFET INCHANGE
IXTH36P10 Standard Power MOSFET IXYS Corporation
IXTH36P10 P-Channel MOSFET INCHANGE
IXTH300N04T2 N-Channel MOSFET INCHANGE
IXTH30N50 Power MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH300N04T2 Power MOSFET
IXTH30N45 N-Channel MOSFET
IXTH30N50L Power MOSFET
IXTH30N50L2 Power MOSFET
IXTH30N50P PolarHV Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS VDSS = ID25 = ≤ RDS(on) 500 36 170 V A mΩ TO-3P (IXTQ) Symbol V DSS VDGR VGS VGSM I D25 IDM IAR E AR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions T J = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient T C = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 3 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque(TO-247) Mounting force (PLUS220) TO-247 TO-268 PLUS220 TO-3P Maximum Ratings 500 V 500 V G DS ±30 V ±40 V TO-247 (IXTH) 36 A 108 A 36 A 50 mJ 1.