IXTH420N04T2 - Power MOSFET

Features

z International Standard Package z 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.

IXYS

Datasheet Details

Part number	IXTH420N04T2
Manufacturer	IXYS
File Size	164.96 KB
Description	Power MOSFET
Datasheet	IXTH420N04T2 Datasheet
Additional preview pages of the IXTH420N04T2 datasheet.

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Full PDF Text Transcription

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Advance Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH420N04T2 VDSS = ID25 = RDS(on) ≤ 40V 420A 2.0mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold M d Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque Maximum Ratings 40 V 40 V ± 20 V 420 A 160 A 1050 A 200 A 960 mJ 935 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in.

Published: Nov 13, 2020 |