IXTH4N150 - High Voltage Power MOSFET

Features

z International Standard Package z Fast Intrinsic Diode z Avalanche Rated z Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Easy to Mount z Space Savings z High Power Density.

IXYS

Datasheet Details

Part number	IXTH4N150
Manufacturer	IXYS
File Size	121.06 KB
Description	High Voltage Power MOSFET
Datasheet	IXTH4N150 Datasheet
Additional preview pages of the IXTH4N150 datasheet.

📁 Similar Datasheet

IXTH40N30 - Power MOSFET (IXYS Corporation)
IXTH40N30 - N-Channel MOSFET (INCHANGE)
IXTH40N50L2 - N-Channel MOSFET (INCHANGE)
IXTH420N04T2 - N-Channel MOSFET (INCHANGE)
IXTH450P2 - N-Channel MOSFET (INCHANGE)
IXTH460P2 - N-Channel MOSFET (INCHANGE)
IXTH48N20 - N-Channel MOSFET (INCHANGE)
IXTH48P20P - Polar3 Power MOSFET (IXYS Corporation)
IXTH102N15T - N-Channel MOSFET (INCHANGE)
IXTH102N20T - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS

IXTH40N50L2 - Power MOSFET
IXTH420N04T2 - Power MOSFET
IXTH440N055T2 - Power MOSFET
IXTH44P15T - Power MOSFET
IXTH450P2 - Power MOSFETs
IXTH460P2 - Power MOSFET
IXTH48N20 - Power MOSFET
IXTH48N65X2 - Power MOSFET

Full PDF Text Transcription

Click to expand full text

High Voltage Power MOSFET IXTH4N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque Maximum Ratings 1500 V 1500 V ±30 V ±40 V 4 A 12 A 4 A 350 mJ 5 V/ns 280 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 260 1.13 / 10 6 °C °C Nm/lb.in.

Published: Mar 24, 2025 |