Datasheet Details
| Part number | IXTH50N30 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 576.99 KB |
| Description | Power MOSFET |
| Datasheet |
 IXTH50N30 Datasheet
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| Part number | IXTH50N30 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 576.99 KB |
| Description | Power MOSFET |
| Datasheet |
IXTH50N30 Datasheet
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Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 300 V 300 V ±20 V ±30 V 50 A 200 A 50 A 50 mJ 1.5 J 5 V/ns 400 W -55 ...
+150 °C 150 °C -55 ...
+150 °C 300 °C 1.13/10 Nm/lb.in.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IXTH50N30 | N-Channel MOSFET | INCHANGE |
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