Datasheet4U Logo Datasheet4U.com

IXTH68P20T - P-Channel Power MOSFET

Download the IXTH68P20T datasheet PDF. This datasheet also covers the IXTT68P20T variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT68P20T-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH68N20 Power MOSFET IXYS Corporation
IXTH60N15 N-Channel MOSFET INCHANGE
IXTH60N20L2 N-Channel MOSFET INCHANGE
IXTH62N65X2 N-Channel MOSFET INCHANGE
IXTH64N10L2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH60N15 Power MOSFET
IXTH60N20L2 Power MOSFET
IXTH62N65X2 Power MOSFET
IXTH64N10L2 Power MOSFET
IXTH64N65X Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TrenchPTM Power MOSFETs Preliminary Technical Information IXTT68P20T IXTH68P20T VDSS = ID25 = ≤ RDS(on) - 200V - 68A 55mΩ P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD M d Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings - 200 V - 200 V ±15 V ±25 V - 68 A - 200 A - 68 A 2.5 J 10 V/ns 568 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 260 1.13 / 10 4 6 °C °C Nm/lb.in.