Click to expand full text
TrenchPTM Power MOSFETs
Preliminary Technical Information
IXTT68P20T IXTH68P20T
VDSS =
ID25 = ≤ RDS(on)
- 200V - 68A
55mΩ
P-Channel Enhancement Mode Avalanche Rated
TO-268 (IXTT)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD M
d
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
- 200
V
- 200
V
±15
V
±25
V
- 68
A
- 200
A
- 68
A
2.5
J
10
V/ns
568
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300 260
1.13 / 10
4 6
°C °C Nm/lb.in.
IXTH68P20T Datasheet
