Overview: TrenchPTM Power MOSFETs Preliminary Technical Information IXTT68P20T IXTH68P20T VDSS =
ID25 = ≤ RDS(on) - 200V - 68A
55mΩ P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD M
d
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings - 200 V - 200 V ±15 V ±25 V - 68 A - 200 A - 68 A 2.5 J 10 V/ns 568 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 260
1.13 / 10
4 6 °C °C Nm/lb.in.
g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. - 200 V - 2.0 - 4.
