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Standard Power MOSFET
IXTH / IXTM 6N80 IXTH / IXTM 6N80A
N-Channel Enhancement Mode
V DSS
I
D25
R DS(on)
800 V 6 A 1.8 Ω
800 V 6 A 1.4 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM ID25 IDM PD TJ TJM Tstg M
d
Weight
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous
Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
800 V 800 V
±20 V ±30 V
6A 24 A
180 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
VDSS V
GS(th)
IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
IXTH6N80 Datasheet
