Datasheet Details
| Part number | IXTJ36N20 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 67.84 KB |
| Description | N-Channel MOSFET |
| Datasheet | IXTJ36N20-IXYS.pdf |
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Overview: ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 V ID25 = 36 A RDS(on) = 70 mΩ trr < 200 ns Symbol Test Conditions VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt P D TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 200 V 200 V ±20 V ±30 V 36 A 144 A 36 A 19 mJ 5 V/ns 300 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 5g 300 ° C Symbol V DSS VGS(th) IGSS I DSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.
| Part number | IXTJ36N20 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 67.84 KB |
| Description | N-Channel MOSFET |
| Datasheet | IXTJ36N20-IXYS.pdf |
|
|
|
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|---|---|---|---|
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