IXTJ36N20 Description
+150 °C °C °C 1.13/10 Nm/lb.in. 5g 300 ° C Symbol V DSS VGS(th) IGSS I DSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
IXTJ36N20 Key Features
- International standard package
- Low RDS (on) HDMOSTM process -Rugged polysilicon gate cell structure -High mutating dv/dt rating -Fast switching times