IXTK200N10L2 - Power MOSFET

This page provides the datasheet information for the IXTK200N10L2, a member of the IXTX200N10L2 Power MOSFET family.

Product Overview

IXYS

Part number	IXTK200N10L2
Manufacturer	IXYS
File Size	152.40 KB
Description	Power MOSFET
Datasheet	IXTK200N10L2 Datasheet
Additional preview pages of the IXTK200N10L2 datasheet.

z z z G D S Tab TC = 25°C (Chip Capability) Lead Current Limit, (RMS) TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C PLUS247(IXTX) G D S Tab G = Gate S = Source D = Drain Tab = Drain Designed for Linear Operation Avalanche Rated Guaranteed FBSOA at 75°C Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 3mA VGS = ±20V,.

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Published: Dec 16, 2013 |