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IXTK200N10L2 - Power MOSFET

Download the IXTK200N10L2 datasheet PDF. This datasheet also covers the IXTX200N10L2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z G D S Tab TC = 25°C (Chip Capability) Lead Current Limit, (RMS) TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C PLUS247(IXTX) G D S Tab G = Gate S = Source D = Drain Tab = Drain Designed for Linear Operation Avalanche Rated Guaranteed FBSOA at 75°C Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 3mA VGS = ±20V,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTX200N10L2_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information Linear L2TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6mm (0.063 in.) from Case for 10s Plastic Body for 10s Mounting Torque (IXTK) Mounting Force (IXTX) TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient IXTK200N10L2 IXTX200N10L2 VDSS ID25 RDS(on) = 100V = 200A < 11mΩ TO-264 (IXTK) Maximum Ratings 100 100 ±20 ±30 200 160 500 100 5 1040 -55...+150 150 -55...+150 300 260 1.13/10 20..120 / 4.5..27 10 6 V V V V A A A A J W °C °C °C °C °C Nm/lb.in. N/lb.