IXTK33N50 Description
High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 33N50 VDSS = 500 V ID (cont) = 33 A RDS(on) = 0.17 Ω Preliminary data Symbol Test conditions VDSS VDGR VGS VGSM ID25 IDM TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 °C 1.13/10 Nm/lb.in. 10 g 300 °C Characteristic Values Min.
IXTK33N50 Key Features
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell
- International standard package
- Fast switching times