Overview: High Current MegaMOSTMFET
N-Channel Enhancement Mode IXTK 33N50 VDSS = 500 V
ID (cont) = 33 A RDS(on) = 0.17 Ω Preliminary data Symbol Test conditions VDSS VDGR
VGS VGSM
ID25 IDM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ
Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM PD TC = 25°C T J
TJM T
stg Md Mounting torque Weight Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions (TJ = 25°C unless otherwise specified) V DSS V = 0 V, I = 5 mA GS D BVDSS temperature coefficient V GS(th) V DS = VGS, I
D = 250 µA V temperature coefficient GS(th) IGSS VGS = ±20 V DC, VDS = 0 I V = 0.8 V DSS DS DSS VGS = 0 V T = 25°C J
TJ = 125°C R DS(on) V = 10 V, I = 0.5 I GS D D25 Maximum ratings 500 V 500 V ±20 V ±30 V 33 A 132 A 416 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in. 10 g 300 °C Characteristic Values Min. Typ. Max. 500 V 0.087 %/K 2.0 4.0 V -0.25 %/K ±100 nA 200 µA 3 mA 0.
