IXTK60N50L2 - Power MOSFET

This page provides the datasheet information for the IXTK60N50L2, a member of the IXTX60N50L2 Power MOSFET family.

Features

Designed for linear operation.
International standard packages.
Avalanche rated.
Guaranteed FBSOA at 75C Advantages.
Easy to mount.
Space savings.
High power density.

IXYS

📥 Download Datasheet

Datasheet Details

Part number	IXTK60N50L2
Manufacturer	IXYS
File Size	159.72 KB
Description	Power MOSFET
Datasheet	IXTK60N50L2 Datasheet
Additional preview pages of the IXTK60N50L2 datasheet.

📁 Similar Datasheet

IXTK60N50L2 - N-Channel MOSFET (INCHANGE)
IXTK62N25 - Power MOSFET (IXYS Corporation)
IXTK68N20 - Power MOSFET (IXYS Corporation)
IXTK100N25P - N-Channel MOSFET (IXYS Corporation)
IXTK102N30P - PolarHT Power MOSFET (IXYS Corporation)
IXTK102N30P - N-Channel MOSFET (INCHANGE)
IXTK110N20L2 - N-Channel MOSFET (INCHANGE)
IXTK120N20P - N-Channel MOSFET (INCHANGE)
IXTK120N25 - Power MOSFET (IXYS Corporation)
IXTK120N25P - PolarHT Power MOSFET (IXYS Corporation)

Other Datasheets by IXYS

IXTK600N04T2 - Power MOSFET
IXTK102N65X2 - Power MOSFET
IXTK110N20L2 - Power MOSFET
IXTK120N20P - PolarHT Power MOSFET
IXTK120N65X2 - Power MOSFET
IXTK170N10P - Power MOSFET
IXTK170P10P - Power MOSFET
IXTK17N120L - Power MOSFET

Full PDF Text Transcription

Click to expand full text

LinearL2TM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTK60N50L2 IXTX60N50L2 VDSS ID25 RDS(on) = 500V = 60A < 100m TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C 60 150 60 3 960 -55...+150 150 -55...+150 A A A J W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting torque (IXTK) Mounting Force (IXTX) 1.13/10 20..120 / 4.5..27 Nm/lb.

Published: Dec 16, 2013 |