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Advance Technical Information
High Current MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 75N30
VDSS =
ID25
=
= RDS(on)
300 V
75 A 42 mΩ
Symbol Test conditions
VDSS VDGR
VGS VGSM
ID25 I
DM
IAR
EAR E
AS
dv/dt
PD TJ TJM Tstg TL Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ
Continuous Transient
TC = 25°C
T C
=
25°C,
pulse
width
limited
by
T JM
TC = 25°C
TC = 25°C
T C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264
Maximum ratings
300
V
300
V
±20
V
±30
V
75
A
300
A
75
A
60
mJ
2.5
J
5
V/ns
TO-264 AA (IXTK)
G D S
D (TAB)
G = Gate S = Source
D = Drain Tab = Drain
540 -55 ... +150
150 -55 ... +150
300 0.7/6
10
W
°C °C °C °C Nm/lb.in.
IXTK75N30 Datasheet
