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IXTK80N30L2 - N-Channel Power MOSFET

Key Features

  • Designed for Linear Operation.
  • International Standard Packages.
  • Avalanche Rated.
  • Guaranteed FBSOA at 75C Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription for IXTK80N30L2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTK80N30L2. For precise diagrams, and layout, please refer to the original PDF.

Advance Technical Information LinearL2TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTK80N30L2 IXTX80N30L2 D O DD RGi G O ww O S VDSS = ID...

View more extracted text
valanche Rated IXTK80N30L2 IXTX80N30L2 D O DD RGi G O ww O S VDSS = ID25 =  RDS(on) 300V 80A 38m TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 300 V 300 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 80 A 200 A TC = 25C TC = 25C 80 A 3 J TC = 25C 960 W -55 ... +150 C 150 C -55 ... +150 C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/l

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