IXTP08N100P Datasheet | IXYS

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY08N100P IXTA08N100P IXTP08N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 20 30 TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 0.8 1.5 0.8 80 10 42 -55 ... +150 150 -55 ... +150 A mJ V/ns W C C C Maximum Lead Temperature for Soldering °C 1.6 mm (0.062in.) from Case for 10s °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb...