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Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
TO-220 (IXTP)
VDSS = ID25 =
RDS(on) ≤
150V 102A 18mΩ
TO-3P (IXTQ)
G S
(TAB)
GD S
(TAB)
G DS
(TAB)
G D S
(TAB)
Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ
Continuous Transient
Maximum Ratings
150
V
150
V
± 20
V
± 30
V
TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM
TC = 25°C TC = 25°C
102
A
75
A
300
A
51
A
750
mJ
IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C TC = 25°C
10
455
-55 ... +175 175
-55 ... +175
V/ns
W
°C °C °C
1.6mm (0.062 in.
IXTP102N15T Datasheet
