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IXTP120N04T2 - Power MOSFET

This page provides the datasheet information for the IXTP120N04T2, a member of the IXTA120N04T2 Power MOSFET family.

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Part number IXTP120N04T2
Manufacturer IXYS
File Size 197.96 KB
Description Power MOSFET
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TrenchT2TM Power MOSFET IXTA120N04T2 IXTP120N04T2 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 40V 120A 6.1mΩ TO-263 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 Maximum Ratings 40 40 V V ± 20 V 120 A 360 A 50 A 400 mJ 200 W -55 ...
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