IXTP120N075T2 - Power MOSFET

This page provides the datasheet information for the IXTP120N075T2, a member of the IXTA120N075T2 Power MOSFET family.

Datasheet Summary

Features

International Standard Packages.
Avalanche Rated.
Low Package Inductance.
Fast Intrinsic Rectifier 175°C Operating Temperature.
High Current Handling Capability.
ROHS Compliant.
High Performance Trench Technology for extremely low RDS(on) Advantages.
High Power Density.
Easy to Mount.
Space Savings.

IXYS

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Datasheet Details

Part number	IXTP120N075T2
Manufacturer	IXYS
File Size	311.87 KB
Description	Power MOSFET
Datasheet	IXTP120N075T2 Datasheet
Additional preview pages of the IXTP120N075T2 datasheet.

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Full PDF Text Transcription

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TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA120N075T2 IXTP120N075T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 75 V 75 V 20 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 120 300 60 600 250 -55 ... +175 175 -55 ... +175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.

Published: Nov 6, 2020 |