Overview: PolarHVTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTP14N60PM VDSS = ID25 =
RDS(on) ≤ 600V 7A 550mΩ OVERMOLDED (IXTP...M) OUTLINE Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Maximum Ratings 600 V 600 V ± 30 V ± 40 V 7 A 42 A 14 A 900 mJ 10 V/ns 75 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 2.5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 7A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 600 V 3.0 5.
