Datasheet4U Logo Datasheet4U.com

IXTP160N04T2 - Power MOSFET

Download the IXTP160N04T2 datasheet PDF. This datasheet also covers the IXTA160N04T2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier 175°C Operating Temperature.
  • High Current Handling Capability.
  • ROHS Compliant.
  • High Performance Trench Technology for extremely low RDS(on) Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA160N04T2-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N04T2 IXTP160N04T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 40 V 40 V 20 V TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 160 120 400 80 600 250 -55 ... +175 175 -55 ... +175 A A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.