Overview: PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTA16N50P IXTP16N50P IXTQ16N50P VDSS =
ID25 = ≤ RDS(on) 500V 16A 400mΩ TO-263 (IXTA) Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3P,TO-220) TO-263 TO-220 TO-3P Maximum Ratings 500 V 500 V ±30 V ±40 V 16 A 35 A 16 A 750 mJ 10 V/ns 300 W - 55 ... +150 150
- 55 ... +150
300 260
1.13/10
2.5 3.0 5.5 °C °C °C
°C °C
Nm/lb.in.
g g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.
