Overview: Advance Technical Information PolarHVTM Power MOSFET
(Electrically Isolated Tab) IXTP16N50PM VDSS = ID25 =
RDS(on) ≤ 500V 7.5A 420mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP...M) OUTLINE Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
1.6 mm (0.062 in.) from Case for 10 s Plastic Body for 10 s Mounting Torque Maximum Ratings 500 V 500 V ± 30 V ± 40 V 7.5 A 35 A 16 A 750 mJ 10 V/ns 75 W - 55 ... +150 150
- 55 ... +150
300 260
1.13/10
2.5 °C °C °C
°C °C
Nm/lb.in.
g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = 10V, ID = 8A, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.
