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Advance Technical Information
PolarHVTM Power MOSFET
(Electrically Isolated Tab)
IXTP16N50PM
VDSS = ID25 =
RDS(on) ≤
500V 7.5A 420mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
OVERMOLDED (IXTP...M) OUTLINE
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
1.6 mm (0.062 in.) from Case for 10 s Plastic Body for 10 s Mounting Torque
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
7.5
A
35
A
16
A
750
mJ
10
V/ns
75
W
- 55 ... +150 150
- 55 ... +150
300 260
1.13/10
2.5
°C °C °C
°C °C
Nm/lb.in.
IXTP16N50PM Datasheet
