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IXTP18N60PM - Power MOSFET

Key Features

  • z Plastic Overmolded Tab for Electrical Isolation z International Standard Package z Low RDS(on) and QG z Avalanche Rated z Low Package Inductance z Fast Intrinsic Rectifier Advantages z High Power Density z Easy to Mount z Space Savings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP18N60PM VDSS = ID25 = RDS(on) ≤ 600V 9A 420mΩ OVERMOLDED (IXTP...M) OUTLINE Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062in.