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PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
1200
V
1200
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
1.4 3.0 1.4 150 10 86 -55 ... +150 150 -55 ... +150
A A
A mJ V/ns
W C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263) Mounting Torque (TO-220)
10..65 / 2.2..14.6 1.13 / 10
N/lb Nm/lb.in
TO-252 / HV TO-263 TO-220
0.35
g
2.50
g
3.
IXTP1R4N120P Datasheet
