IXTP1R4N120P Description
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C,.
IXTP1R4N120P Key Features
- International Standard Packages
- Low QG
- Avalanche Rated
- Low Package Inductance
- Fast Intrinsic Rectifier
- High Power Density
- Easy to Mount
- Space Savings