IXTP200N085T - Power MOSFET

This page provides the datasheet information for the IXTP200N085T, a member of the IXTA200N085T Power MOSFET family.

Datasheet Summary

Features

Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density.

IXYS

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Datasheet Details

Part number	IXTP200N085T
Manufacturer	IXYS
File Size	206.22 KB
Description	Power MOSFET
Datasheet	IXTP200N085T Datasheet
Additional preview pages of the IXTP200N085T datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 200N085T IXTP 200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.

Published: Feb 13, 2015 |