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TrenchTM Power MOSFET
IXTA32N20T IXTP32N20T
VDSS = 200V
ID25 = 32A RDS(on) ≤ 78mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220
Maximum Ratings
200
V
200
V
±20
V
±30
V
32
A
64
A
16
A
250
mJ
10
V/ns
200
W
- 55 ... +175
°C
175
°C
- 55 ... +175
°C
300 260
1.13 / 10
2.5 3.0
°C °C
Nm/lb.in.
IXTP32N20T Datasheet
