Overview: Preliminary Technical Information X-Class Power MOSFET
N-Channel Enhancement Mode IXTP32N65X IXTQ32N65X IXTH32N65X VDSS = ID25 = RDS(on) 650V 32A 135m TO-220AB (IXTP) Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM IS ID25, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-3P TO-247 Maximum Ratings 650 650 V V 30 V 40 V 32 A 64 A 30 V/ns 500 W -55 ... +150 150
-55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.
