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TrenchHVTM Power MOSFET
IXTA42N15T IXTP42N15T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
150V 42A 45mΩ
TO-263
Symbol
VDSS VDGR
VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS RDS(on)
VDS = VDSS
VGS = 0V
TJ = 150°C
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Maximum Ratings
150
V
150
V
± 30
V
42
A
100
A
5
A
400
mJ
200
W
-55 ...
IXTP42N15T Datasheet
