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IXTP42N15T - Power MOSFET

Download the IXTP42N15T datasheet PDF. This datasheet also covers the IXTA42N15T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International standard packages z 175°C Operating Temperature z Avalanche rated Advantages z Easy to mount z Space savings z High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA42N15T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP42N15T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP42N15T. For precise diagrams, and layout, please refer to the original PDF.

TrenchHVTM Power MOSFET IXTA42N15T IXTP42N15T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150V 42A 45mΩ TO-263 Symbol VDSS VDGR VGSM ID25 IDM IA EA...

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= RDS(on) ≤ 150V 42A 45mΩ TO-263 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS RDS(on) VDS = VDSS VGS = 0V TJ = 150°C VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 Maximum Ratings 150 V 150 V ± 30 V 42 A