z Avalanche Rated z Fast Intrinsic Diode z Dynamic dv/dt Rated z Low Package Inductance
Advantages
z High Power Density z Easy to Mount z Space Savings.
Full PDF Text Transcription for IXTP450P2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTP450P2. For precise diagrams, and layout, please refer to the original PDF.
Q450P2 IXTH450P2 VDSS ID25 RDS(on) trr(typ) = = ≤ = 500V 16A 330mΩ 400ns TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque TO-220 TO-3P TO-247 Maximum Ratings 500 500 V V ± 30 V ± 40 V 16 A 48 A 16 A 750 mJ 10 V/ns 300 W -55 ... +150 150 -55 ... +150 300 260 °C °C °C °C °C 1.13/10 3.0 5.5 6.0 Nm/lb.in.
IXTP450P2 Datasheet
