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IXTP48N20T - Power MOSFET

Download the IXTP48N20T datasheet PDF. This datasheet also covers the IXTA48N20T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA48N20T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP48N20T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP48N20T. For precise diagrams, and layout, please refer to the original PDF.

TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA48N20T IXTP48N20T IXTQ48N20T Symbol VDSS VDGR VGSM ID25 IDM IA EAS dv/dt PD ...

View more extracted text
IXTP48N20T IXTQ48N20T Symbol VDSS VDGR VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Force (TO-263) Mounting Torque (TO-220 & TO-3P) TO-263 TO-220 TO-3P Maximum Ratings 200 200 V V ± 30 V 48 A 130 A 5A 500 mJ 3 250 -55 ... +175 175 -55 ... +175 300 260 10..65/2.2..14.6 1.13/10 2.5 3.0 5.5 V/ns W °C °C °C °C °C Nm/lb.in Nm/lb.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTP48N20T N-Channel MOSFET INCHANGE

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