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IXTP48P05T - Power MOSFET

Download the IXTP48P05T datasheet PDF. This datasheet also covers the IXTY48P05T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTY48P05T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP48P05T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP48P05T. For precise diagrams, and layout, please refer to the original PDF.

TrenchPTM Power MOSFETs Preliminary Technical Information IXTY48P05T IXTA48P05T IXTP48P05T VDSS = ID25 = ≤RDS(on) - 50V - 48A 30mΩ P-Channel Enhancement Mode Avalanche Ra...

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25 = ≤RDS(on) - 50V - 48A 30mΩ P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VG

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTP48P05T TO-252 P-Channel MOSFET INCHANGE
INCHANGE Logo IXTP48P05T TO-220C P-Channel MOSFET INCHANGE

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