Download the IXTP4N65X2 datasheet PDF.
This datasheet also covers the IXTY4N65X2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
International Standard Packages.
Low RDS(ON) and QG.
Avalanche Rated.
Low Package Inductance
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5.
ID25, Note 1
Characteristic Values
Min. Typ. Max. 650 V
3.0 5.0 V
100 nA
5 A 100 A
850 m
Advantages.
Full PDF Text Transcription for IXTP4N65X2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTP4N65X2. For precise diagrams, and layout, please refer to the original PDF.
65X2 IXTP4N65X2 VDSS = ID25 = RDS(on) 650V 4A 850m TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 650 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C 4 8 2 150 50 80 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) Mounting Torque (TO-220) 10.65 / 2.2..14.6 1.13 / 10 N/lb
IXTP4N65X2 Datasheet
