IXTP60N10T Description
TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient.
IXTP60N10T Key Features
- Ultra-Low On Resistance
- Avalanche Rated
- Low Package Inductance
- Easy to Drive and to Protect
- 175C Operating Temperature
- Fast Intrinsic Diode
- Easy to Mount
- Space Savings
- High Power Density