Datasheet4U Logo Datasheet4U.com

IXTP60N10T Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 60 180 10 500 176 -55 ... +175 175 -55 ... +175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 1.6 mm (0.062in.) from Case for 10s 260 Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 TO-263 2.5 TO-220 3.0 °C °C N/lb Nm/lb.in g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 50A IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 25A, Notes 1& 2 Characteristic Values Min. Typ. Max. 100 V 2.5 4.5 V             100 nA 1 A 100  A 14.8 18.

Key Features

  • Ultra-Low On Resistance.
  • Avalanche Rated.
  • Low Package Inductance - Easy to Drive and to Protect.
  • 175C Operating Temperature.
  • Fast Intrinsic Diode Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

IXTP60N10T Distributor