• Part: IXTP60N10T
  • Description: Power MOSFET
  • Manufacturer: IXYS
  • Size: 288.95 KB
Download IXTP60N10T Datasheet PDF
IXYS
IXTP60N10T
IXTP60N10T is Power MOSFET manufactured by IXYS.
TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings  20  30 TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 60 180 10 500 -55 ... +175 175 -55 ... +175 A mJ  C  C  C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 /...