Overview: PolarHVTM Power MOSFET IXTA 6N50P IXTP 6N50P N-Channel Enhancement Mode Avalanche Rated VDSS = 500 ID25 = 6 RDS(on) ≤ 1.1 V A
Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 18 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-220)
TO-220 TO-263 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 50µA IGSS VGS = ±30 V, VDS = 0V IDSS VDS = VDSS VGS = 0 V TJ = 125° C RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % Maximum Ratings
500 V 500 V
± 30 V ± 40 V
6A 15 A
6A 20 mJ 250 mJ
10 V/ns 100
-55 ... +150 150
-55 ... +150
300 260 W
°C °C °C
°C °C 1.13/10 Nm/lb.in. 4g 3g Characteristic Values Min. Typ. Max. 500 V
3.0 5.0 V
±100 nA
5 µA 50 µA
1.
