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TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA70N075T2 IXTP70N075T2
VDSS = ID25 =
RDS(on) ≤
75V 70A 12mΩ
TO-263 (IXTA)
Symbol VDSS VDGR
VGSM ID25 IDM IAR EAS PD TJ TJM Tstg TL
Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
Maximum Ratings 75 75
V V
± 20 V
70 A 180 A
40 A 300 mJ
150 W
-55 ... +175 175
-55 ..
IXTP70N075T2 Datasheet
