IXTP75N10P Overview
+175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 4 g 3 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min.
IXTP75N10P Key Features
- easy to drive and to protect
- di/dt = 100 A/µs
- Gate 3
- Source
- Drain 4
