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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 75N10P IXTP 75N10P IXTQ 75N10P
V
= 100 V
DSS
ID25
= 75 A
≤ RDS(on)
25 mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR
VGS VGSM
ID25 IDM IAR
E AR
EAS
dv/dt
PD TJ T
JM
Tstg
TL TSOLD M
d
Weight
Test Conditions
TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C
T C
= 25° C
TC = 25° C
I S
≤
I,
DM
di/dt
≤ 100
A/µs,
V DD
≤
V, DSS
T J
≤150° C,
R G
=
10
Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-3P / TO-220)
TO-3P TO-220 TO-263
Maximum Ratings
100
V
100
V
±20
V
±30
V
75
A
200
A
50
A
30
mJ
1.0
J
10
V/ns
360
W
-55 ... +175
°C
175
°C
-55 ...
IXTP75N10P Datasheet
