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IXTP76N25T - Power MOSFET

Features

  • Avalanche Rated.
  • High Current Handling Capability.
  • Fast Intrinsic Rectifier.
  • Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Datasheet preview – IXTP76N25T

Datasheet Details

Part number IXTP76N25T
Manufacturer IXYS
File Size 286.18 KB
Description Power MOSFET
Datasheet download datasheet IXTP76N25T Datasheet
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TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on)  250V 76A 44m Typical Avalanched BV = 300V TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 250 V 250 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 76 A 170 A TC = 25C TC = 25C 8 A 1.5 J TC = 25C 460 W -55 ... +150 C 150 C -55 ... +150 C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-3P & TO-247) 1.
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