Datasheet Summary
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA80N10T IXTP80N10T
VDSS ID25
RDS(on)
= = ≤
100V 80A 14mΩ
TO-263 AA (IXTA)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
Maximum Ratings 100 100 ± 20 ± 30 80 220 25 400 230 10 -55 ... +175 175 -55 ... +175 V V V V A A A mJ W V/ns °C °C °C °C °C Nm/lb.in. g g
G = Gate S = Source
D (Tab)
TO-220AB (IXTP)
D (Tab)
D = Drain Tab = Drain
Features z...
