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IXTP86N20T - Power MOSFET

Download the IXTP86N20T datasheet PDF. This datasheet also covers the IXTA86N20T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Current Handling Capability.
  • Avalanche Rated.
  • Fast Intrinsic rectifier.
  • Low R DS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA86N20T-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP86N20T N-Channel MOSFET INCHANGE
IXTP80N075L2 N-Channel MOSFET INCHANGE
IXTP80N10T N-Channel MOSFET INCHANGE
IXTP80N12T2 N-Channel MOSFET INCHANGE
IXTP88N085T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTP80N075L2 Power MOSFET
IXTP80N10T Power MOSFET
IXTP80N12T2 Power MOSFET
IXTP8N50P PolarHV Power MOSFET
IXTP8N65X2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Trench Gate Power MOSFET N-Channel Enhancement Mode Avalance Rated IXTA86N20T IXTP86N20T IXTQ86N20T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 200 V 200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 86 260 10 1 550 3 -55 ... +175 175 -55 ... +175 A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-3P) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-3P 2.5 g 3.0 g 5.