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IXTQ10P50P - Power MOSFET

Download the IXTQ10P50P datasheet PDF. This datasheet also covers the IXTA10P50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Avalanche Rated.
  • Rugged PolarPTM Process.
  • Low Package Inductance.
  • Fast Intrinsic Diode Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA10P50P-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 =  RDS(on) - 500V - 10A 1 TO-3P (IXTQ) G S D (Tab) G DS D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings - 500 V - 500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C - 10 A - 30 A - 10 A 1.5 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 10 300 -55 ... +150 150 -55 ... +150 V/ns W C C C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 300 C 260 C Mounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.