IXYS IXTQ120N15P
Power MOSFET
MAXIMUM RATINGS
150 V 150 V ±20 V ±30 V 120 A 75 A 260 A 60 A 60 mJ 2.0 J 10 V/ns 600 W -55 ... +175 °C 175 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 5.0 g Symbol Test Conditions (T J = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 150 V VGS(th) VDS = VGS, ID = 250µA 3.0 5.0 V I GSS V GS = ±20 V, DC V DS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 175° C 25 µA 500 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 16 m Ω TO-3P (IXTQ) G DS (TAB) TO-268 (IXTT) G S D (TAB) G = Gate S = Source D = Drain TAB = DrainFEATURES
l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2005 IXYS All rights reserved DS99280E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd R thJC RthCS IXTQ 120N15P IXTT 120N15P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min.