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IXTQ120N20P - PolarHT Power MOSFET

Download the IXTQ120N20P datasheet PDF. This datasheet also covers the IXTK120N20P variant, as both devices belong to the same polarht power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99207E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS RthCS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 40 63 S DS D D25 VGS = 0 V, VDS =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTK120N20P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ120N20P N-ChannelMOSFET INCHANGE
IXTQ120N15P N-ChannelMOSFET INCHANGE
IXTQ100N25P N-Channel MOSFET IXYS Corporation
IXTQ102N15T N-Channel MOSFET INCHANGE
IXTQ102N20T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTQ120N15P Power MOSFET
IXTQ102N15T Power MOSFET
IXTQ102N20T Power MOSFET
IXTQ10P50P Power MOSFET
IXTQ130N15T Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 V 200 V VGS VGSM Continuous Transient ±20 V ±30 V ID25 ID(RMS) IDM I AR EAR E AS TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C T C = 25° C 120 A 75 A 300 A 60 A 60 mJ 2.0 J dv/dt PD TJ TJM Tstg IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤175° C, RG = 4 Ω TC = 25° C 10 V/ns 714 W -55 ... +175 °C 175 °C -55 ... +175 °C TL T SOLD 1.6 mm (0.062 in.