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IXTQ130N20T - Power MOSFET

Key Features

  • High Current Handling Capability.
  • Avalanche Rated.
  • Fast Intrinsic rectifier.
  • Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TrenchTM Power MOSFET IXTQ130N20T IXTH130N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-3P TO-247 Maximum Ratings 200 V 200 V  20 V  30 V 130 A 75 A 320 A 4 A 1 J 10 V/ns 830 W -55 ... +175 175 -55 ... +175 300 260  C  C  C °C °C 1.13 / 10 5.5 6.0 Nm/lb.