z International Standard Packages z Avalanche Rated z Fast Intrinsic Diode z Low Package Inductance
Advantages
z High Power Density z Easy to Mount z Space Savings.
Full PDF Text Transcription for IXTQ16N50P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTQ16N50P. For precise diagrams, and layout, please refer to the original PDF.
DSS = ID25 = ≤ RDS(on) 500V 16A 400mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3P,TO-220) TO-263 TO-220 TO-3P Maximum Ratings 500 V 500 V ±30 V ±40 V 16 A 35 A 16 A 750 mJ 10 V/ns 300 W - 55 ... +150 150 - 55 ... +150 300 260 1.13/10 2.5 3.0 5.5 °C °C °C °C °C Nm/lb.in.
IXTQ16N50P Datasheet
