IXTQ22N60P Datasheet PDF (PolarHV Power MOSFET)

IXTQ22N60P - PolarHV Power MOSFET

Features

Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 250 330 V V nA µA µA mΩ z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

Datasheet Details

Part number	IXTQ22N60P
Manufacturer	IXYS
File Size	198.95 KB
Description	PolarHV Power MOSFET
Datasheet	IXTQ22N60P Datasheet
Additional preview pages of the IXTQ22N60P datasheet.

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www.DataSheet4U.com PolarHV Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet TM IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS(on) = 600 V = 22 A ≤ 330 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 400 -55 ... +150 150 -55 ... +150 300 250 W °C °C °C °C °C Maximum Ratings 600 600 ± 20 ± 30 22 66 22 40 1.

Published: Jun 15, 2010 |