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PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS
V= DSS
ID25 = ≤ RDS(on)
500 30
200
V A mΩ
TO-247 AD (IXTH)
Symbol
Test Conditions
Maximum Ratings
(TAB)
VDSS VDGR
VGSS V
GSM
ID25 IDM I
AR
EAR EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD
M d
FC
Weight
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous Transient
TC = 25° C TC = 25° C, pulse width limited by TJM
T C
= 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 5 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-247, TO-3P) Mounting force (PLUS220, PLUS220SMD)
PLUS220, PLUS220SMD TO-268 TO-3P TO-247
500
V
500
V
±30
V
±40
V
30
A
75
A
30
A
40
mJ
1.
IXTQ30N50P Datasheet
